| PART |
Description |
Maker |
| BCR16PR-12LBA8B00 BCR16PR-12LBB00 |
600V - 16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BCR16CM-12LB-15 |
600V - 16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| HTX16-600 |
600V 16A TRIAC
|
SemiHow Co.,Ltd.
|
| BCR16CM-16LB-15 |
800V - 16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| BCR3FM-12RB-15 |
600V - 3A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| STW16NB60 |
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMeshMOSFET N沟道600V 0.3ohm - 16A条，247 PowerMesh⑩MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh⑩ MOSFET
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| NTE5679 |
TRIAC - 600V / 40A
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC - 600V, 40A
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| STW18NK60Z |
N-CHANNEL 600V - 0.27 - 16A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 600V - 0.27?/a> - 16A TO-247 Zener-Protected SuperMESH?/a> MOSFET
N-CHANNEL 600V - 0.27з - 16A TO-247 Zener-Protected SuperMESH⑩ MOSFET
N-CHANNEL 600V - 0.27 OHM - 16A TO-247 ZENER-PROTECTED SUPERMESH™ MOSFET
N-CHANNEL MOSFET
|
STMicroelectronics
ST Microelectronics
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
